| Location | NY |
| Salary | $147,000–$250,000 Per Year |
onsemi is seeking a Power Device Engineer (MTS/SMTS Engineer in our Hopewell Junction, NY, site to join our Power Technology Development team and lead the advancement of innovative discrete power MOSFET and FET technologies. This is a highly visible technical role offering the opportunity to influence technology strategy, drive product innovation, and work alongside some of the industry''s leading device experts.
onsemi (Nasdaq: ON) is driving disruptive innovations to help build a better future. With a focus on automotive and industrial end-markets, the company is accelerating change in megatrends such as vehicle electrification and safety, sustainable energy grids, industrial automation, and 5G and cloud infrastructure. With a highly differentiated and innovative product portfolio, onsemi creates intelligent power and sensing technologies that solve the world's most complex challenges and leads the way in creating a safer, cleaner, and smarter world.
More details about our company benefits can be found here:
https://www.onsemi.com/careers/career-benefits
Qualifications:
BS, MS, or PhD in Electrical Engineering, Physics, Materials Science, or a related technical field.
Experience developing semiconductor devices, with emphasis on:
Power MOSFETs
Trench MOSFETs
Super Junction devices
Other discrete power technologies
Strong understanding of:
Semiconductor device physics
Device reliability
Semiconductor manufacturing processes
Experience moving new technologies from development through qualification and volume production.
Knowledge of wafer fabrication, wafer probe, electrical characterization, and device testing.
Experience with data-driven problem solving and statistical analysis techniques.
Ability to independently drive technical projects and influence cross-functional teams.
Strong written and verbal communication skills.
Preferred Skills
High-voltage and high-current power device development.
300mm semiconductor manufacturing environments.
TCAD, SPICE, electro-thermal, or compact modeling tools.
Wafer-level test, WAT, PCM, probe, and final test methodologies.
Packaging technologies for discrete power devices, including:
AEC-Q101 automotive qualification and reliability testing.
SiC and GaN power semiconductor technologies.
Statistical analysis tools such as JMP, Python, or MATLAB.
Patent development and technology innovation experience.
Salary: onsemi is excited to share the base salary range for this position is $147,000 to $250,000 exclusive of fringe benefits or potential bonuses. The final pay rate for the successful candidate will depend on geographic location, skills, education, experience, and/or consideration of internal equity of our current team members. We also offer a competitive benefits package. https://www.onsemi.com/site/pdf/Benefits-Summary-USA.pdf
Responsibilities:
As a key contributor to our technology development team, you will:
Lead the development of next-generation discrete power MOSFET technologies from concept through qualification and production ramp.
Define device architectures and electrical performance targets focused on improving:
RDS(on)
Switching efficiency
Power density
Ruggedness and reliability
Drive device simulation, modeling, characterization, and silicon validation activities.
Collaborate closely with process integration, manufacturing, product engineering, packaging, reliability, and applications teams to deliver innovative power device solutions.
Analyze electrical data, yield trends, and reliability results to identify opportunities for performance improvement.
Solve challenging device and process integration issues using data-driven methodologies, including DOE, SPC, FMEA, and Six Sigma techniques.
Partner with fabrication teams to optimize process windows and ensure robust manufacturability.
Support technology roadmaps and evaluate emerging device concepts in power MOSFET, Super Junction, SiC, and GaN technologies.
Contribute to patents, invention disclosures, and technical publications that expand onsemi''s technology leadership.
Mentor engineers, provide technical leadership, and help grow the next generation of power semiconductor innovators.
Responsibilities:
As a key contributor to our technology development team, you will:
Lead the development of next-generation discrete power MOSFET technologies from concept through qualification and production ramp.
Define device architectures and electrical performance targets focused on improving:
RDS(on)
Switching efficiency
Power density
Ruggedness and reliability
Drive device simulation, modeling, characterization, and silicon validation activities.
Collaborate closely with process integration, manufacturing, product engineering, packaging, reliability, and applications teams to deliver innovative power device solutions.
Analyze electrical data, yield trends, and reliability results to identify opportunities for performance improvement.
Solve challenging device and process integration issues using data-driven methodologies, including DOE, SPC, FMEA, and Six Sigma techniques.
Partner with fabrication teams to optimize process windows and ensure robust manufacturability.
Support technology roadmaps and evaluate emerging device concepts in power MOSFET, Super Junction, SiC, and GaN technologies.
Contribute to patents, invention disclosures, and technical publications that expand onsemi''s technology leadership.
Mentor engineers, provide technical leadership, and help grow the next generation of power semiconductor innovators.