| Location | Bloomington, MN |
Step into a high‑impact technical leadership role where you’ll drive the development and optimization of cutting‑edge Power Trench MOSFET and BCD technologies. You’ll lead simulations, hands‑on experiments, and deep data analysis that shape reliable, manufacturable devices; all while mentoring junior engineers and partnering closely with design, process, and reliability teams. From architecting process flows to guiding test chip success and presenting progress to leadership, this role puts you at the center of innovation with big technical challenges and real influence across the organization.
Requirements
MS/PhD in EE, Physics, or Materials Science
10+ years relevant experience
Deep knowledge of FEOL modules (silicon, epi, diffusion, etch, lithography, thin films)
Strong CMOS/BCDMOS or power‑device integration experience (IGBTs/MOSFETs)
Solid semiconductor device physics foundation
Expertise in process‑flow design, manufacturability, and meeting electrical targets
Skilled in interpreting electrical test data, cross‑sections, and FA results
Familiar with power‑device packaging, assembly, and reliability
Experience with backend processes (BGBM, STM) and FMEA development
Proficient with DoE tools (JMP, Spotfire) and TCAD simulations
Strong layout interpretation and cross‑functional communication
Benefits